Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual
- RS庫存編號:
- 228-2925
- 製造零件編號:
- SiS590DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
HK$72.40
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 5,920 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$7.24 | HK$72.40 |
| 50 - 90 | HK$7.03 | HK$70.30 |
| 100 - 240 | HK$6.81 | HK$68.10 |
| 250 - 990 | HK$6.61 | HK$66.10 |
| 1000 + | HK$6.41 | HK$64.10 |
* 參考價格
- RS庫存編號:
- 228-2925
- 製造零件編號:
- SiS590DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8 Dual | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.251Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 23.1W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8 Dual | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.251Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 23.1W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Combo N- & P-Channel -100 V MOSFET.
100 % Rg and UIS tested
相关链接
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