Vishay Dual TrenchFET 2 N-Channel MOSFET, 31.8 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- RS庫存編號:
- 228-2936
- 製造零件編號:
- SIZ256DT-T1-GE3
- 製造商:
- Vishay
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$18,066.00
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$6.022 | HK$18,066.00 |
| 15000 + | HK$5.842 | HK$17,526.00 |
* 參考價格
- RS庫存編號:
- 228-2936
- 製造零件編號:
- SIZ256DT-T1-GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31.8A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0176Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31.8A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0176Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 70 V (D-S) MOSFET.
100 % Rg and UIS tested
相关链接
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