Vishay TrenchFET Type N-Channel MOSFET, 500 A, 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3
- RS庫存編號:
- 228-2950
- 製造零件編號:
- SQJ126EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$102.70
訂單超過 HK$250.00 免費送貨
供應短缺
- 加上 2,990 件從 2026年8月17日 起發貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$20.54 | HK$102.70 |
| 50 - 95 | HK$19.94 | HK$99.70 |
| 100 - 245 | HK$19.34 | HK$96.70 |
| 250 - 995 | HK$18.76 | HK$93.80 |
| 1000 + | HK$18.18 | HK$90.90 |
* 參考價格
- RS庫存編號:
- 228-2950
- 製造零件編號:
- SQJ126EP-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.94mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.94mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 30 V power MOSFET.
100 % Rg and UIS tested
相关链接
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