Infineon IAUS300N08S5N011T N-Channel MOSFET, 400 A, 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N011TATMA1

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HK$50,999.40

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RS庫存編號:
228-6524
製造零件編號:
IAUS300N08S5N011TATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

400A

Maximum Drain Source Voltage Vds

80V

Package Type

HDSOP

Series

IAUS300N08S5N011T

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

+175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon IAUS300N08S5N011T Series MOSFET, 80V Maximum Drain Source Voltage, 400A Maximum Continuous Drain Current - IAUS300N08S5N011TATMA1


This MOSFET is a high-current switching device designed for demanding automotive and industrial environments, offering N-channel enhancement-mode operation in a Compact surface-mount package. It is intended to control large drain currents and withstand elevated temperatures while providing low conduction losses for power conversion and switching applications.

Features and Benefits:


• 400A continuous drain current provides high-current switching capability
• 1.1mΩ Rds(on) minimises conduction losses during load cycles
• 80V drain-source rating allows higher-voltage system compatibility
• 375W maximum power dissipation supports heavy-duty thermal loading
• ±20V gate tolerance permits robust gate-drive voltages
• -55°C to 175°C operating range enables wide-temperature reliability

Applications


• Suitable for automotive powertrain inverter stages
• Ideal for high-current DC-DC converters in vehicles
• Used with traction motor controllers in electric vehicles
• Can be used for industrial motor-drive switching
• Used for high-power battery management and distribution

What package type and mounting method does it use?


It is supplied in an HDSOP package intended for surface mounting which facilitates Compact board layouts and thermal management.

What diode characteristic should be considered for reverse conduction?


The intrinsic diode exhibits a forward voltage of 1.2V which informs conduction losses during freewheeling intervals.

How many electrical connections are available on the device?


The component provides 16 pins to support gate, drain and source routing for high-current board designs.

What semiconductor channel and operating mode does it employ?


The device uses an N-type channel operating in enhancement mode suitable for standard MOSFET gate-drive architectures.

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