Infineon IAUT N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN IAUZ40N10S5N130ATMA1
- RS庫存編號:
- 229-1812
- 製造零件編號:
- IAUZ40N10S5N130ATMA1
- 製造商:
- Infineon
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HK$22,495.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | HK$4.499 | HK$22,495.00 |
| 25000 + | HK$4.409 | HK$22,045.00 |
* 參考價格
- RS庫存編號:
- 229-1812
- 製造零件編號:
- IAUZ40N10S5N130ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | IAUT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series IAUT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUT Series MOSFET, 100V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - IAUZ40N10S5N130ATMA1
This MOSFET is a high-current, enhancement-mode N-channel transistor designed for surface-mounted power switching in demanding electronic systems. It operates across a wide temperature span and is suitable for applications requiring robust gate handling and substantial continuous current capability.
Features and Benefits:
• 100V drain-source rating enabling higher-voltage DC-DC conversion
• 40A continuous drain current supporting sustained high-load operation
• 13mΩ low Rds(on) reducing conduction losses during switching
• 68W power dissipation allowing greater thermal headroom
• ±20V gate-source limit providing tolerance for gate-drive swings
• −55°C to +175°C temperature range ensuring operation in harsh environments
• 40A continuous drain current supporting sustained high-load operation
• 13mΩ low Rds(on) reducing conduction losses during switching
• 68W power dissipation allowing greater thermal headroom
• ±20V gate-source limit providing tolerance for gate-drive swings
• −55°C to +175°C temperature range ensuring operation in harsh environments
Applications
• Suitable for DC-DC converter stages in power supplies
• Ideal for high-current switching in automotive environments
• Used for power management in electric vehicle subsystems
• Can be used for surface-mount designs requiring leadless packaging
• Used with battery management and distribution circuits
• Ideal for high-current switching in automotive environments
• Used for power management in electric vehicle subsystems
• Can be used for surface-mount designs requiring leadless packaging
• Used with battery management and distribution circuits
What package type does it use for board assembly?
It is supplied in a leadless PQFN package intended for surface mounting.
What gate-drive considerations are important for reliable switching?
Gate excursions must remain within ±20V to avoid gate-dielectric stress and ensure safe operation.
How does thermal management impact continuous current capability?
The 68W power-dissipation rating indicates the device can handle significant heat, adequate PCB thermal vias and copper area are required to sustain 40A continuous drain current.
What environmental limits govern its deployment in extreme conditions?
It is specified to function from −55°C up to +175°C, allowing use across a broad range of ambient and elevated temperatures.
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