onsemi NTB01 Type N-Channel MOSFET, 75.4 A, 150 V Enhancement, 4-Pin TO-263
- RS庫存編號:
- 230-9077
- 製造零件編號:
- NTB011N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
HK$17,274.40
訂單超過 HK$250.00 免費送貨
有庫存
- 6,400 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | HK$21.593 | HK$17,274.40 |
| 1600 - 7200 | HK$21.161 | HK$16,928.80 |
| 8000 + | HK$20.738 | HK$16,590.40 |
* 參考價格
- RS庫存編號:
- 230-9077
- 製造零件編號:
- NTB011N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75.4A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | NTB01 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136.4W | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75.4A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series NTB01 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136.4W | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 15.88mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A
Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
相关链接
- onsemi NTB01 Type N-Channel MOSFET 150 V Enhancement, 4-Pin TO-263 NTB011N15MC
- onsemi NTB Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi NTB7D Type N-Channel MOSFET 150 V Enhancement, 4-Pin TO-263