Infineon CoolSiC N-Channel MOSFET, 36 A, 1.2 kV Enhancement, 3-Pin TO-247 AIMW120R060M1HXKSA1
- RS庫存編號:
- 233-3489
- 製造零件編號:
- AIMW120R060M1HXKSA1
- 製造商:
- Infineon
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HK$239.10
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$239.10 |
| 10 - 49 | HK$234.30 |
| 50 - 99 | HK$229.60 |
| 100 - 149 | HK$225.00 |
| 150 + | HK$220.60 |
* 參考價格
- RS庫存編號:
- 233-3489
- 製造零件編號:
- AIMW120R060M1HXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 5.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Width | 21.5mm | |
| Standards/Approvals | No | |
| Length | 16.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 5.2V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Width 21.5mm | ||
Standards/Approvals No | ||
Length 16.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFETs for Automotive family has been developed for current and future on board charger and DC-DC applications in hybrid and electric vehicles. It has 36 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
相关链接
- Infineon CoolSiC N-Channel MOSFET 1.2 kV Enhancement, 3-Pin TO-247 AIMW120R060M1HXKSA1
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- Infineon CoolSiC N-Channel MOSFET 1.2 kV Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R020M1TXKSA1
- Infineon CoolSiC N-Channel MOSFET 1.2 kV Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R060M1TXKSA1