Infineon IPTC N-Channel MOSFET, 354 A, 100 V Enhancement, 16-Pin HDSOP IPTC015N10NM5ATMA1
- RS庫存編號:
- 233-4378
- 製造零件編號:
- IPTC015N10NM5ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 2 件)*
HK$102.10
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$51.05 | HK$102.10 |
| 10 - 98 | HK$50.05 | HK$100.10 |
| 100 - 248 | HK$49.05 | HK$98.10 |
| 250 - 498 | HK$48.10 | HK$96.20 |
| 500 + | HK$47.10 | HK$94.20 |
* 參考價格
- RS庫存編號:
- 233-4378
- 製造零件編號:
- IPTC015N10NM5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 354A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HDSOP | |
| Series | IPTC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 166nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.3mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 354A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HDSOP | ||
Series IPTC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 166nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.3mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
The Infineon IPTC015N10NM5 is part of OptiMOS 5 power MOSFET in TOLT in that TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS 5 technology allows best-in-class products in 100 V as well as high current rating 300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.
Negative stand-off
Saving in cooling system
Increased system efficiency enabling extended battery life time
相关链接
- Infineon IPTC N-Channel MOSFET 100 V Enhancement, 16-Pin HDSOP IPTC019N10NM5ATMA1
- Infineon IPTC N-Channel MOSFET 80 V Enhancement, 16-Pin HDSOP IPTC012N08NM5ATMA1
- Infineon IPTC N-Channel MOSFET 80 V Enhancement, 16-Pin HDSOP IPTC014N08NM5ATMA1
- Infineon IPT N-Channel MOSFET 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1
- Infineon IAUS300N08S5N011T N-Channel MOSFET 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N011TATMA1
- Infineon IAUS300N08S5N014T N-Channel MOSFET 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N014TATMA1
- Infineon IAUS300N08S5N012T N-Channel MOSFET 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N012TATMA1
- Infineon IAUS300N10S5N015T N-Channel MOSFET 100 V Enhancement, 16-Pin HDSOP IAUS300N10S5N015TATMA1
