Infineon ISC N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1

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包裝方式:
RS庫存編號:
233-4397
製造零件編號:
ISZ034N06LM5ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

288A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

1.1mm

Standards/Approvals

No

Length

3.4mm

Height

3.4mm

Automotive Standard

No

Infineon ISC Series MOSFET, 60V Maximum Drain Source Voltage, 288A Maximum Continuous Drain Current - ISZ034N06LM5ATMA1


This MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in Compact power assemblies. It operates across a wide ambient temperature range and is suited to applications requiring low conduction losses and Rapid gate-driven switching, while being housed in a small TDSON package.

Features and Benefits:


• Maximum continuous drain current 288A for heavy current handling
• Low drain-source resistance 3.4mΩ to reduce conduction losses
• 60V drain-source rating for medium-voltage power stages
• Typical gate charge 53nC enabling efficient switching transitions
• Maximum power dissipation 83W to sustain elevated load conditions
• Gate-source withstand 20V for robust gate-drive margins

Applications


• Suitable for high-current motor-drive stages
• Used with synchronous buck converters in power supplies
• Ideal for DC power distribution and load switching
• Can be used for battery management and cell balancing
• Suitable for Compact surface-mount power assemblies

What allows operation across extreme temperature ranges?


Internal semiconductor structure and tested ratings permit use from −55°C up to 175°C.

How does the package support thermal management?


The TDSON surface-mount package provides a low-profile thermal path for heat dissipation within PCB layouts.

What gate-drive considerations are required for switching performance?


Drive circuitry should accommodate up to 20V gate-source excursion and manage the 53nC typical gate charge for desired switching speed.

How should designers account for conduction losses at high current?


Use the 3.4mΩ Rds(on) Value to calculate I²R losses and verify PCB copper and thermal vias to handle the resulting heat.

What Peak power capability is indicated for sustained operation?


The device is specified with a maximum power dissipation of 83W for continuous thermal design considerations.

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