ROHM N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

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小計(1 包,共 5 件)*

HK$94.10

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最後的 RS 庫存
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每單位
每包*
5 - 45HK$18.82HK$94.10
50 - 95HK$18.50HK$92.50
100 - 245HK$18.16HK$90.80
250 - 995HK$17.84HK$89.20
1000 +HK$17.48HK$87.40

* 參考價格

包裝方式:
RS庫存編號:
235-2681
製造零件編號:
R6504END3TL1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

58W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

10.4mm

Length

6.4mm

Standards/Approvals

No

Width

2.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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