Infineon OptiMOS™ N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 卷,共 5000 件)*

HK$66,575.00

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看

單位
每單位
每卷*
5000 - 5000HK$13.315HK$66,575.00
10000 - 10000HK$13.048HK$65,240.00
15000 +HK$12.657HK$63,285.00

* 參考價格

RS庫存編號:
236-3639
製造零件編號:
BSC004NE2LS5ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

479A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS™

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.45mΩ

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

135nC

Maximum Power Dissipation Pd

188W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5.49mm

Height

1.1mm

Width

6.35mm

Automotive Standard

No

Infineon OptiMOS™ Series MOSFET, 25V Maximum Drain Source Voltage, 479A Maximum Continuous Drain Current - BSC004NE2LS5ATMA1


This MOSFET is a high-current N-channel semiconductor designed for surface-mount power switching in demanding thermal environments. It operates across an extended temperature range and is intended for applications requiring substantial continuous drain current and low conduction losses while mounted in a TDSON package.

Features and Benefits:


• 479A continuous drain current reduces conduction constraints for high loads
• 0.45mΩ maximum RDS(on) lowers on-state energy dissipation
• 25V maximum drain-source voltage permits low-voltage power stages
• 188W maximum power dissipation supports elevated thermal loading
• 135nC typical gate charge enables controlled switching for gate-drive design
• 20V maximum gate-source voltage allows robust gate-drive margins

Applications


• Suitable for high-current DC power distribution modules
• Ideal for synchronous rectification in low-voltage converters
• Used with motor inverter stages requiring high Peak currents
• Can be used for battery management and high-power cells
• Used for power stages in telecommunications rectifiers

What ambient temperatures can it withstand?


It is specified to operate from −55°C up to 175°C.

What package and mounting style does it use?


It is supplied in a TDSON package for surface mounting.

How does its gate-drive requirement affect design?


The 135nC gate charge requires a driver sized for higher charge transfer to meet desired switching speed and losses.

What polarity of channel does it employ and how does that affect usage?


It uses an N-channel topology, which is suited to low-side switching and synchronous rectifier configurations.

What voltage and current limits should be observed during design?


Design should respect a maximum drain-source voltage of 25V and a maximum continuous drain current of 479A.

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。