Vishay SIH N-Channel MOSFET, 20 A, 850 V TO-247AC SIHG24N80AEF-GE3
- RS庫存編號:
- 239-5376
- 製造零件編號:
- SIHG24N80AEF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 25 件）*
HK$797.20
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 475 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 75 | HK$31.888 | HK$797.20 |
| 100 - 475 | HK$30.928 | HK$773.20 |
| 500 - 975 | HK$30.004 | HK$750.10 |
| 1000 + | HK$29.10 | HK$727.50 |
* 參考價格
- RS庫存編號:
- 239-5376
- 製造零件編號:
- SIHG24N80AEF-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-247AC | |
| Series | SIH | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 0.17Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-247AC | ||
Series SIH | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 0.17Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
相关链接
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