Vishay EF N-Channel MOSFET, 7 A, 850 V Depletion, 3-Pin TO-220 SIHA21N80AEF-GE3
- RS庫存編號:
- 239-8625
- 製造零件編號:
- SIHA21N80AEF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
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查看批量定價選項小計（1 包，共 2 件）*
HK$67.80
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$33.90 | HK$67.80 |
| 10 - 18 | HK$33.25 | HK$66.50 |
| 20 - 24 | HK$32.60 | HK$65.20 |
| 26 - 98 | HK$32.10 | HK$64.20 |
| 100 + | HK$31.45 | HK$62.90 |
* 參考價格
- RS庫存編號:
- 239-8625
- 製造零件編號:
- SIHA21N80AEF-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.22Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.22Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay E series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
Low figure-of-merit
Low effective capacitance
Low switching and conduction losses
相关链接
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