Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
- RS庫存編號:
- 239-8637
- 製造零件編號:
- SIHK125N60E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
HK$52,232.00
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,000 件從 2026年6月15日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | HK$26.116 | HK$52,232.00 |
| 10000 + | HK$25.332 | HK$50,664.00 |
* 參考價格
- RS庫存編號:
- 239-8637
- 製造零件編號:
- SIHK125N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.11Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.11Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3
This power MOSFET is a high-voltage N-channel transistor designed for demanding electronic and automotive applications. It functions as a depletion-mode switch to control high-voltage circuits and is suitable for surface-mount assembly in systems requiring robust thermal and electrical performance. The device operates across a wide temperature range and conforms to automotive quality standards for use in vehicle electronics.
Features and Benefits:
• 650V drain voltage enabling high-voltage system switching • 21A continuous drain current for sustained load handling • 0.109Ω Rds(on) for reduced conduction losses • 132W power dissipation supporting elevated thermal loads • 54nC typical gate charge allowing predictable switching energy • ±30V gate tolerance for robust gate-drive margin
Applications
• Suitable for automotive power conversion and inverter stages • Ideal for high-voltage motor drive front-ends • Used for industrial automation high-voltage switching • Can be used for power supplies in electrical systems
What operating temperature range can I expect for reliability?
The device supports continuous operation from -55°C up to +150°C allowing use in environments with wide thermal variation.
How does the package influence thermal performance on a PCB?
The surface-mount PowerPAK 10x12 package provides a low thermal resistance path to the board, aiding heat transfer when soldered to appropriate PCB copper areas.
What gate-drive considerations should I allow for switching?
With a typical gate charge of 54nC and a maximum gate-source rating of ±30V, gate drivers must supply sufficient charge and respect the voltage limit to control switching speed safely.
Are there industry standards applicable to this component?
The device meets AEC-Q101 requirements and is RoHS-compliant, aligning it with automotive-grade component selection criteria.