Vishay TrenchFET Gen IV Type P-Channel MOSFET, 445 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3
- RS庫存編號:
- 239-8678
- 製造零件編號:
- SQJQ130EL-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
HK$54.80
訂單超過 HK$250.00 免費送貨
有限的庫存
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | HK$27.40 | HK$54.80 |
| 50 - 98 | HK$26.90 | HK$53.80 |
| 100 - 248 | HK$26.45 | HK$52.90 |
| 250 - 998 | HK$25.95 | HK$51.90 |
| 1000 + | HK$25.50 | HK$51.00 |
* 參考價格
- RS庫存編號:
- 239-8678
- 製造零件編號:
- SQJQ130EL-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00052Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Width | 4.9 mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00052Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Width 4.9 mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJQ is automotive P-Channel MOSFET which operates at 30 V and 175 °C temperature. This MOSFET used for high power density.
Low resistance
AEC-Q101 qualified
UIS tested
Thin package
相关链接
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
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