Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6

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小計(1 卷,共 5000 件)*

HK$29,890.00

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5000 - 5000HK$5.978HK$29,890.00
10000 - 10000HK$5.859HK$29,295.00
15000 +HK$5.742HK$28,710.00

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RS庫存編號:
241-9682
製造零件編號:
BSZ075N08NS5ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

SuperSO8 5 x 6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS™ 5 N-channel MOSFET has 80 V drain source voltage (VDS) & 73 A drain current (ID). It offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. regulator, etc. It is especially designed for synchronous rectification in telecom and server power supplies. In addition, it can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Ideal for high frequency switching and sync. rec.

Optimized technology for DC/DCconverters

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

100% avalanche tested

N-channel, normal level

Qualified according to JEDEC1) for target applications

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Higher solder joint reliability with enlarged source interconnection

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