Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin TSDSON-8 FL BSZ010NE2LS5ATMA1
- RS庫存編號:
- 241-9883
- 製造零件編號:
- BSZ010NE2LS5ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（2 件, 每袋2個）*
HK$30.10
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 4,996 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$15.05 | HK$30.10 |
| 10 - 98 | HK$14.70 | HK$29.40 |
| 100 - 248 | HK$14.35 | HK$28.70 |
| 250 - 498 | HK$13.95 | HK$27.90 |
| 500 + | HK$13.60 | HK$27.20 |
* 參考價格
- RS庫存編號:
- 241-9883
- 製造零件編號:
- BSZ010NE2LS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON-8 FL | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON-8 FL | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Power-Transistor is a N channel MOSFET which is optimized for high performance buck converters. It has superior thermal resistance.
Halogen-free according to IEC61249-2-21
Very low on-resistance
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