Infineon IPA N-Channel MOSFET, 84 A, 40 V N, 3-Pin TO-220 IPA60R180P7XKSA1
- RS庫存編號:
- 242-0984
- 製造零件編號:
- IPA60R180P7XKSA1
- 製造商:
- Infineon
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HK$53.00
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$26.50 | HK$53.00 |
| 10 - 98 | HK$25.80 | HK$51.60 |
| 100 - 248 | HK$25.15 | HK$50.30 |
| 250 - 498 | HK$24.70 | HK$49.40 |
| 500 + | HK$24.00 | HK$48.00 |
* 參考價格
- RS庫存編號:
- 242-0984
- 製造零件編號:
- IPA60R180P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel power MOSFET is in the package form of TO-220-3. The maximum continous drain current is 18 A and drain source voltage is 600 V. The operating temperature is -55 °C to 175 °C.
Through hole mounting technology
26 W Power Dissipation
Suitable for hard and soft switching (PFC and LLC)
Outstanding commutation ruggedness
Significant reduction of switching and conduction losses.
Excellent ESD robustness
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