Infineon IPT N-Channel MOSFET, 400 A, 800 V, 8-Pin TO-263
- RS庫存編號:
- 244-0901
- 製造零件編號:
- IPT012N08N5ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
HK$55,984.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年6月22日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | HK$27.992 | HK$55,984.00 |
| 4000 - 4000 | HK$27.432 | HK$54,864.00 |
| 6000 + | HK$26.883 | HK$53,766.00 |
* 參考價格
- RS庫存編號:
- 244-0901
- 製造零件編號:
- IPT012N08N5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPT | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPT | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPT Series MOSFET, 800V Maximum Drain Source Voltage, 400A Maximum Continuous Drain Current - IPT012N08N5ATMA1
This MOSFET is a high-voltage, high-current switching device designed for demanding power conversion and automotive environments. It functions as an N-channel transistor for controlling large DC loads and is intended for surface-mounted applications where thermal endurance and robust electrical performance are required.
Features and Benefits:
• 800V rating enables high-voltage switch operation
• 400A continuous current supports heavy-load applications
• 1.2mΩ low Rds(on) minimises conduction losses
• 81W power dissipation allows sustained power handling
• 80nC gate charge permits predictable switching control
• -55°C to 175°C temperature range ensures wide thermal tolerance
• 400A continuous current supports heavy-load applications
• 1.2mΩ low Rds(on) minimises conduction losses
• 81W power dissipation allows sustained power handling
• 80nC gate charge permits predictable switching control
• -55°C to 175°C temperature range ensures wide thermal tolerance
Applications
• Suitable for high-voltage traction inverter stages
• Ideal for battery management and power distribution
• Used with automotive power converters meeting AEC‑Q101 requirements
• Can be used for industrial motor drive switching
• Used for high-current DC-DC converter topologies
• Ideal for battery management and power distribution
• Used with automotive power converters meeting AEC‑Q101 requirements
• Can be used for industrial motor drive switching
• Used for high-current DC-DC converter topologies
What gate voltage limits must be observed?
The device accepts up to 20V between gate and source and requires appropriate gate drive levels within that limit.
What package should be considered for thermal management?
The TO‑263 surface-mount package offers a large thermal pad area for heatsinking and PCB thermal dissipation.
How does the component handle automotive qualification?
It conforms to the AEC‑Q101 automotive test standard for semiconductor devices used in vehicles.
What environmental regulation compliance is present?
The component meets RoHS requirements for restricted hazardous substances.
What is the channel conduction type and switching orientation?
It is an N-channel device configured for drain-to-source conduction in conventional high-side or low-side switch arrangements.
相关链接
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