Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- RS庫存編號:
- 244-0943
- 製造零件編號:
- IPD65R225C7ATMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$24,885.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$9.954 | HK$24,885.00 |
| 5000 - 5000 | HK$9.755 | HK$24,387.50 |
| 7500 + | HK$9.56 | HK$23,900.00 |
* 參考價格
- RS庫存編號:
- 244-0943
- 製造零件編號:
- IPD65R225C7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD65R225C7ATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding environments. It provides robust drain-to-source handling for medium-voltage applications and operates across a wide temperature range, making it suitable for industrial and automotive contexts where compact, high-power switching is required.
Features and Benefits:
• 40V maximum drain-to-source voltage supporting medium-voltage circuits
• 180A continuous drain current enabling high-current switching
• 1.2mΩ low Rds(on) minimising conduction losses
• 81W maximum power dissipation allowing sustained load handling
• 80nC typical gate charge delivering predictable switching energy
• 0.9V forward voltage reducing voltage drop under load
• 180A continuous drain current enabling high-current switching
• 1.2mΩ low Rds(on) minimising conduction losses
• 81W maximum power dissipation allowing sustained load handling
• 80nC typical gate charge delivering predictable switching energy
• 0.9V forward voltage reducing voltage drop under load
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current DC motor drive stages
• Used with battery management systems in electric vehicles
• Can be used for industrial power converters
• Suitable for Compact surface-mount power assemblies
• Ideal for high-current DC motor drive stages
• Used with battery management systems in electric vehicles
• Can be used for industrial power converters
• Suitable for Compact surface-mount power assemblies
What gate drive amplitude can be applied safely?
The gate may be driven up to 20V relative to source within specified limits.
What thermal range can the device tolerate during operation?
It functions across temperatures from -55°C to +150°C for extended use.
Which mounting style is provided for board assembly?
It is supplied in a TO-252 package intended for surface mounting.
Does it meet automotive qualification standards?
It complies with AEC-Q101 requirements for automotive component grading.
Are there environmental restrictions on its manufacture?
The device adheres to RoHS directives restricting hazardous substances.
相关链接
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD30N12S3L31ATMA1
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD60R145CFD7ATMA1
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1