Infineon ISS Type P-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-23 ISS17EP06LMXTSA1
- RS庫存編號:
- 244-2275
- 製造零件編號:
- ISS17EP06LMXTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$16.20
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 1,160 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$1.62 | HK$16.20 |
| 20 - 90 | HK$1.58 | HK$15.80 |
| 100 - 240 | HK$1.55 | HK$15.50 |
| 250 - 490 | HK$1.50 | HK$15.00 |
| 500 + | HK$1.46 | HK$14.60 |
* 參考價格
- RS庫存編號:
- 244-2275
- 製造零件編號:
- ISS17EP06LMXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | ISS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series ISS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel Power MOSFET offer design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.
P-Channel
Low On-resistance RDS(on)
100% Avalanche tested
Logic level or normal level
Enhancement mode
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
相关链接
- Infineon ISS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon ISS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon ISS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 ISS55EP06LMXTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1