Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23 ISS55EP06LMXTSA1
- RS庫存編號:
- 244-2278
- 製造零件編號:
- ISS55EP06LMXTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 15 件）*
HK$18.00
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 7,800 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | HK$1.20 | HK$18.00 |
| 30 - 75 | HK$1.18 | HK$17.70 |
| 90 - 225 | HK$1.147 | HK$17.21 |
| 240 - 465 | HK$1.12 | HK$16.80 |
| 480 + | HK$1.093 | HK$16.40 |
* 參考價格
- RS庫存編號:
- 244-2278
- 製造零件編號:
- ISS55EP06LMXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | ISS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series ISS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.
P-Channel
Low On-resistance RDS(on)
100% Avalanche tested
Logic level or normal level
Enhancement mode
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
相关链接
- Infineon ISS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
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