Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1

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包裝方式:
RS庫存編號:
244-8544
製造零件編號:
IPD050N10N5ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon IPD Series MOSFET, 75V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD050N10N5ATMA1


This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in demanding environments, offering wide operating-temperature tolerance and adherence to industry environmental standards.

Features and Benefits:


• 75 V maximum drain-source voltage enables moderate-voltage switching
• 180 A continuous drain current supports high-current applications
• 3 mΩ low on-resistance minimises conduction losses
• 81 W power dissipation allows sustained thermal load handling
• 80 nC typical gate charge enables predictable gate-drive requirements
• 20 V maximum gate-source rating accommodates robust gate drive

Applications


• Suitable for automotive power distribution units
• Ideal for DC-DC converters in industrial equipment
• Used for motor drive stages requiring high current
• Can be used for battery management and protection
• Used with power switching arrays on surface-mount assemblies

What temperature range can it operate within?


It functions across an extended range from -55 °C to 175 °C, supporting harsh thermal conditions.

How does the package influence mounting and thermal performance?


The TO-252 surface-mount package provides a Compact board footprint and facilitates heat transfer to the PCB for thermal management.

What diode characteristic is relevant for forward conduction?


The intrinsic diode exhibits a forward voltage of approximately 1.3 V during conduction events.

Is it suitable for applications with environmental material restrictions?


It complies with RoHS requirements, meeting restrictions on certain hazardous substances.

What channel orientation and mode does it use?


It employs an N-type channel operating in enhancement mode for standard power-switching behaviour.

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