Littelfuse N-Channel SiC Power Module, 36 A, 200 V Enhancement, 3-Pin TO-247 IXFH36N60X3
- RS庫存編號:
- 245-6997
- 製造零件編號:
- IXFH36N60X3
- 製造商:
- Littelfuse
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HK$2,754.21
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | HK$91.807 | HK$2,754.21 |
| 120 - 480 | HK$89.603 | HK$2,688.09 |
| 510 - 990 | HK$87.453 | HK$2,623.59 |
| 1020 - 2490 | HK$85.357 | HK$2,560.71 |
| 2520 + | HK$83.307 | HK$2,499.21 |
* 參考價格
- RS庫存編號:
- 245-6997
- 製造零件編號:
- IXFH36N60X3
- 製造商:
- Littelfuse
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Littelfuse | |
| Product Type | SiC Power Module | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 446W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Littelfuse | ||
Product Type SiC Power Module | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 446W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO 247 package. These Power MOSFETs feature significantly reduced channel resistance RDS on and gate charge Qg. They feature the lowest figures of merit RDS on and RDS on. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET series of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
相关链接
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