DiodesZetex DMN N-Channel MOSFET, 4 A, 60 V Enhancement, 8-Pin PowerDI3333-8
- RS庫存編號:
- 246-6813
- 製造零件編號:
- DMN6069SFVW-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
HK$3,668.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | HK$1.834 | HK$3,668.00 |
| 10000 + | HK$1.797 | HK$3,594.00 |
* 參考價格
- RS庫存編號:
- 246-6813
- 製造零件編號:
- DMN6069SFVW-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI3333-8 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.7mm | |
| Height | 850μm | |
| Width | 2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI3333-8 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 175°C | ||
Length 2.7mm | ||
Height 850μm | ||
Width 2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers a small form factor and thermally efficient package enables higher density end products It offers a small form factor thermally efficient package enables higher density end products Wettable Flank for Improved Optical Inspections
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