DiodesZetex Type N-Channel MOSFET, 40 V Enhancement, 8-Pin PowerDI3333-8
- RS庫存編號:
- 246-6881
- 製造零件編號:
- DMT47M2LDVQ-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
HK$18,633.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$6.211 | HK$18,633.00 |
| 15000 + | HK$6.087 | HK$18,261.00 |
* 參考價格
- RS庫存編號:
- 246-6881
- 製造零件編號:
- DMT47M2LDVQ-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 2.34W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 2.34W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to meet the stringent requirements of automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI 3333-8 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V It offers low on-resistance and has high BVDSS rating for power application It offers low input capacitance
相关链接
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