DiodesZetex Type P, Type N-Channel MOSFET, 4.5 A, 40 V Enhancement, 8-Pin SOIC DMHC4035LSDQ-13
- RS庫存編號:
- 246-7503
- 製造零件編號:
- DMHC4035LSDQ-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
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查看批量定價選項小計（1 包，共 10 件）*
HK$84.50
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$8.45 | HK$84.50 |
| 50 - 90 | HK$8.24 | HK$82.40 |
| 100 - 240 | HK$8.05 | HK$80.50 |
| 250 - 990 | HK$7.86 | HK$78.60 |
| 1000 + | HK$7.66 | HK$76.60 |
* 參考價格
- RS庫存編號:
- 246-7503
- 製造零件編號:
- DMHC4035LSDQ-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | 700mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf 700mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 40 V Maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
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