onsemi NTM N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 5-Pin DFN-5 NTMFS002N10MCLT1G
- RS庫存編號:
- 248-5822
- 製造零件編號:
- NTMFS002N10MCLT1G
- 製造商:
- onsemi
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HK$63.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$31.50 | HK$63.00 |
| 10 - 98 | HK$30.75 | HK$61.50 |
| 100 - 248 | HK$30.00 | HK$60.00 |
| 250 - 498 | HK$29.25 | HK$58.50 |
| 500 + | HK$28.60 | HK$57.20 |
* 參考價格
- RS庫存編號:
- 248-5822
- 製造零件編號:
- NTMFS002N10MCLT1G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor MOSFET is a N channel MOSFET with 100 V drain to source voltage, RDS(ON) 2.8 mohm and continuous drain current 175 A also these devices are Pb−free, Halogen free/BFR free, Beryllium free and are RoHS compliant.
Small footprint (5x6 mm) for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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