Wolfspeed N-Channel MOSFET, 10.7 A, 1.2 kV Enhancement, 4-Pin TO-247
- RS庫存編號:
- 248-8924
- 製造零件編號:
- C3M0021120K
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$8,492.79
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$283.093 | HK$8,492.79 |
| 60 - 60 | HK$268.937 | HK$8,068.11 |
| 90 + | HK$260.87 | HK$7,826.10 |
* 參考價格
- RS庫存編號:
- 248-8924
- 製造零件編號:
- C3M0021120K
- 製造商:
- Wolfspeed
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Maximum Power Dissipation Pd | 469W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 23.63mm | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15V | ||
Maximum Power Dissipation Pd 469W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 23.63mm | ||
Width 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency
3rd generation SiC MOSFET technology
Low impedance package with driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
相关链接
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