ROHM RCJ451N20 N-Channel MOSFET, 10.7 A, 200 V Enhancement, 3-Pin TO-263 RCJ451N20TL
- RS庫存編號:
- 249-1134
- 製造零件編號:
- RCJ451N20TL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
HK$74.40
訂單超過 HK$250.00 免費送貨
有庫存
- 56 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | HK$37.20 | HK$74.40 |
| 50 - 98 | HK$36.15 | HK$72.30 |
| 100 - 248 | HK$35.00 | HK$70.00 |
| 250 - 498 | HK$34.00 | HK$68.00 |
| 500 + | HK$32.95 | HK$65.90 |
* 參考價格
- RS庫存編號:
- 249-1134
- 製造零件編號:
- RCJ451N20TL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | RCJ451N20 | |
| Package Type | TO-263 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series RCJ451N20 | ||
Package Type TO-263 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHs compliant
100 percent avalanche tested
Drive circuits can be simple
相关链接
- ROHM RCJ451N20 N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- ROHM RCJ331N25 N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- ROHM RCJ331N25 N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 RCJ331N25TL
- ROHM BSS84WAHZG Type P-Channel MOSFET 12 V Enhancement SOT
- ROHM RS6L120BG N-Channel MOSFET 12 V Enhancement HSOP-8
- ROHM RQ7L055BG N-Channel MOSFET 40 V Enhancement TSMT-8
- ROHM RS6L120BG N-Channel MOSFET 12 V Enhancement HSOP-8 RS6L120BGTB1
- ROHM BSS84WAHZG Type P-Channel MOSFET 12 V Enhancement SOT BSS84WAHZGT106