STMicroelectronics 3 Phase A2U N-Channel SiC Power Module, 75 A, 1.2 kV Enhancement, 8-Pin ACEPACK 2 A2U12M12W2-F2
- RS庫存編號:
- 249-6720
- 製造零件編號:
- A2U12M12W2-F2
- 製造商:
- STMicroelectronics
可享批量折扣
查看批量定價選項小計（1 件）*
HK$3,160.70
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 6 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 1 | HK$3,160.70 |
| 2 - 3 | HK$3,097.40 |
| 4 - 7 | HK$3,004.40 |
| 8 - 11 | HK$2,944.40 |
| 12 + | HK$2,915.40 |
* 參考價格
- RS庫存編號:
- 249-6720
- 製造零件編號:
- A2U12M12W2-F2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | ACEPACK 2 | |
| Series | A2U | |
| Mount Type | Chassis | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.9V | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 298nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | 3 Phase | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type ACEPACK 2 | ||
Series A2U | ||
Mount Type Chassis | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.9V | ||
Maximum Gate Source Voltage Vgs 18V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 298nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration 3 Phase | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
An NTC sensor completes the design
相关链接
- STMicroelectronics 3 Phase A2U N-Channel SiC Power Module 1200 V Enhancement, 8-Pin ACEPACK 2 A2U12M12W2-F2
- STMicroelectronics A2F SiC Power Module 1200 V Enhancement ACEPACK 2 A2F12M12W2-F1
- onsemi Isolated N-Channel SiC Power Module 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- STMicroelectronics M2TP80M12W2 8 N-Channel MOSFET Arrays 1200 V Enhancement, 32-Pin ACEPACK DMT-32
- STMicroelectronics Sixpack Topology M2P45M12W2 6 N-Channel MOSFET Arrays 1200 V Enhancement, 32-Pin ACEPACK
- STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- ROHM BSM 2 N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM180D12P3C007
- ROHM BSM 2 N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM300D12P2E001