Infineon BSD Type P-Channel MOSFET, 390 mA, -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- RS庫存編號:
- 250-0521
- 製造零件編號:
- BSD223PH6327XTSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$22.60
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 1,740 件從 2026年10月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$2.26 | HK$22.60 |
| 20 - 90 | HK$2.04 | HK$20.40 |
| 100 - 240 | HK$1.83 | HK$18.30 |
| 250 - 490 | HK$1.65 | HK$16.50 |
| 500 + | HK$1.49 | HK$14.90 |
* 參考價格
- RS庫存編號:
- 250-0521
- 製造零件編號:
- BSD223PH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 390mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | BSD | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.20Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 0.25W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 390mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Series BSD | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.20Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 0.25W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD Series MOSFET -20V Drain‑Source Voltage, 0.25W Power Dissipation - BSD223PH6327XTSA1
This p‑channel MOSFET is a surface‑mount transistor designed for low‑power switching across a wide temperature range. It functions as an enhancement‑mode device for controlling current in Compact assemblies and is suitable for environments requiring extended thermal tolerance and automotive‑grade qualification.
Features and Benefits:
• 1.20Ω drain‑source resistance provides predictable conduction behaviour
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies
Applications
• Suitable for battery management and low‑current power‑routing tasks
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits
What temperature extremes can it handle?
It operates across an ambient range from -55°C to +150°C.
Which package and mounting style does it use?
It is supplied in a SOT‑363 package with a surface‑mount footprint and six pins.
Is it compliant with industry environmental standards?
It meets RoHS requirements and is qualified to AEC‑Q101 for automotive use.
What channel type and mode does it employ?
It is a P‑channel device operating in enhancement mode.
相关链接
- Infineon BSD Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- Infineon BSV Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
- ROHM UM6J1N Type P-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 UM6J1NTN
- Infineon OptiMOS 2 N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1
- onsemi Isolated 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G