Infineon BSD235C 2 Type N, Type P-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SOT-363 BSD235CH6327XTSA1
- RS庫存編號:
- 250-0522
- 製造零件編號:
- BSD235CH6327XTSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$3,051.00
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 6,000 件從 2026年10月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$1.017 | HK$3,051.00 |
| 6000 - 6000 | HK$0.996 | HK$2,988.00 |
| 9000 + | HK$0.976 | HK$2,928.00 |
* 參考價格
- RS庫存編號:
- 250-0522
- 製造零件編號:
- BSD235CH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | BSD235C | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 1.20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series BSD235C | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 1.20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD235C Series MOSFET, 20V Maximum Drain-Source Voltage, 0.95A Maximum Continuous Drain Current - BSD235CH6327XTSA1
This MOSFET is a dual enhancement‑mode transistor designed for compact, automotive‑grade applications. It integrates both N‑channel and P‑channel elements on a single chip within a 6‑pin SOT‑363 package, enabling small‑footprint switching and signal tasks. The device is specified to operate across a wide temperature span appropriate for demanding environments and conforms to environmental material restrictions.
Features and Benefits:
• 20V maximum drain source voltage enables low‑voltage switching capability
• 0.95A continuous drain current supports moderate current loads
• 1.2V gate‑source rating allows low‑voltage gate drive operation
• 0.5W power dissipation permits Compact thermal budgeting
• 150°C maximum operating temperature allows elevated ambient use
• 0.95A continuous drain current supports moderate current loads
• 1.2V gate‑source rating allows low‑voltage gate drive operation
• 0.5W power dissipation permits Compact thermal budgeting
• 150°C maximum operating temperature allows elevated ambient use
Applications
• Suitable for automotive load switching in restricted spaces
• Ideal for complementary push‑pull signal stages
• Used with low‑voltage control logic for gate driving
• Can be used for redundant dual‑element power management
• Used for Compact board designs requiring RoHS compliance
• Ideal for complementary push‑pull signal stages
• Used with low‑voltage control logic for gate driving
• Can be used for redundant dual‑element power management
• Used for Compact board designs requiring RoHS compliance
How many transistor elements are integrated on the chip?
It contains two elements, one N‑channel and one P‑channel.
What pin count and package should I plan for in PCB layout?
The device uses a 6‑pin SOT‑363 footprint for surface mounting.
What temperature extremes can it withstand during operation?
The permitted operating range extends from -55°C up to 150°C.
Is the device suitable where material restrictions apply?
It meets RoHS material requirements and is designed accordingly.
相关链接
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
- Infineon BSV Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSD Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- onsemi Isolated 2 Type N Type P 700 mA 6-Pin SOT-363 FDG6332C
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex 2 Type N 4.6 A 6-Pin SOT-363 DMC2710UDWQ-7
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- ROHM UM6J1N Type P-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 UM6J1NTN