Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1

RS庫存編號:: 250-0554
製造零件編號:: BSS209PWH6327XTSA1
製造商:: Infineon

Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

查看批量定價選項

小計（1 包，共 10 件）*

HK$17.30

库存信息目前无法访问 - 请稍候查看

單位	每單位	每包*
10 - 10	HK$1.73	HK$17.30
20 - 90	HK$1.56	HK$15.60
100 - 240	HK$1.41	HK$14.10
250 - 490	HK$1.26	HK$12.60
500 +	HK$1.13	HK$11.30

* 參考價格

RS庫存編號:: 250-0554
製造零件編號:: BSS209PWH6327XTSA1
製造商:: Infineon

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	630mA
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-323
	Series	BSS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 630mA
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-323
	Series BSS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSS209PWH6327XTSA1

Infineon BSS Series MOSFET, 20V Maximum Drain-Source Voltage, 0.63A Maximum Continuous Drain Current - BSS209PWH6327XTSA1

This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount applications in demanding electrical environments. It operates across a wide temperature range and is suited to circuits requiring controlled low-side switching and power management within Compact SOT-323 packages. The device offers practical gate-charge characteristics and modest power handling for small-signal and automotive-related circuitry.

Features and Benefits:

• 550mΩ Rds(on) reduces on-state conduction losses
• 80nC gate charge enables predictable switching performance
• 1V forward voltage minimises voltage drop in diode conduction
• 81W power dissipation supports transient thermal loading
• ±20V gate-source tolerance allows flexible drive arrangements

Applications

• Suitable for automotive control Interface circuits
• Ideal for Compact power-rail reverse-polarity protection
• Used with battery-management sensing and switching
• Can be used for portable device power sequencing
• Useful in surface-mount signal-level power switching

What operating temperatures can it withstand?

It functions from -55°C up to +150°C.

How many pins and what mounting style does it use?

It is a 3-pin device designed for surface mounting in SOT-323 packages.

What certifications or approvals are present for industry use?

It is RoHS-compliant and meets AEC-Q101 automotive standard requirements.

What is the maximum permitted drain-source voltage and gate limit?

The drain-source rating is -20V and the maximum gate-source voltage is ±20V.