Infineon BSV Type P-Channel MOSFET, 1.50 A, -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- RS庫存編號:
- 250-0562
- 製造零件編號:
- BSV236SPH6327XTSA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$29.80
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年12月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$2.98 | HK$29.80 |
| 20 - 90 | HK$2.70 | HK$27.00 |
| 100 - 240 | HK$2.42 | HK$24.20 |
| 250 - 490 | HK$2.18 | HK$21.80 |
| 500 + | HK$1.95 | HK$19.50 |
* 參考價格
- RS庫存編號:
- 250-0562
- 製造零件編號:
- BSV236SPH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.50A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-363 | |
| Series | BSV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4.20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.50A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-363 | ||
Series BSV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4.20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSV Series MOSFET, 20V Maximum Drain-Source Voltage, 1.50A Maximum Continuous Drain Current - BSV236SPH6327XTSA1
This p-channel MOSFET is a surface-mount transistor designed for switching and analogue functions in Compact assemblies. It operates across a wide temperature span from -55°C to +150°C and is suited to applications requiring low conduction losses and modest continuous current handling. The device uses an enhancement-mode P-channel channel and is available in a small SOT-363 package for dense board layouts.
Features and Benefits:
• Low Rds(on) 4.20mΩ reduces conduction losses and improves efficiency
• 20V gate tolerance supports medium-voltage P-channel switching
• 1.50A continuous current capability enables steady low-current loads
• 81W power dissipation allows short-duration higher-power handling
• 80nC typical gate charge permits predictable switching energy control
• 20V gate tolerance supports medium-voltage P-channel switching
• 1.50A continuous current capability enables steady low-current loads
• 81W power dissipation allows short-duration higher-power handling
• 80nC typical gate charge permits predictable switching energy control
Applications
• Suitable for high-temperature automotive power routing
• Ideal for surface-mount load switching on Compact PCBs
• Used with gate drivers in battery management systems
• Can be used for polarity protection and reverse-current control
• Ideal for surface-mount load switching on Compact PCBs
• Used with gate drivers in battery management systems
• Can be used for polarity protection and reverse-current control
What package type should be expected for Compact assemblies?
It is supplied in a SOT-363 package suitable for space-constrained surface-mount designs.
How does gate voltage limitation affect Interface choices?
Gate-to-source voltage must not exceed 20V, so driver circuits should keep Vgs within this range.
What approval supports its automotive use?
It complies with AEC‑Q101 standards for automotive-grade semiconductor qualification.
What thermal range can be handled in harsh environments?
Rated ambient operation spans from -55°C up to +150°C to accommodate extreme-temperature applications.
相关链接
- Infineon BSV Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSS Type P-Channel MOSFET -30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1
- Infineon BSD Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- ROHM UM6J1N Type P-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 UM6J1NTN
- Infineon OptiMOS 2 N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1