Vishay Type P-Channel MOSFET, 6.46 A, 60 V Enhancement, 7-Pin PowerPAK SC-70W-6L SQA411CEJW-T1_GE3
- RS庫存編號:
- 252-0300
- 製造零件編號:
- SQA411CEJW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
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查看批量定價選項小計（1 包，共 25 件）*
HK$106.50
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$4.26 | HK$106.50 |
| 50 - 75 | HK$4.048 | HK$101.20 |
| 100 - 225 | HK$3.804 | HK$95.10 |
| 250 - 975 | HK$3.54 | HK$88.50 |
| 1000 + | HK$3.256 | HK$81.40 |
* 參考價格
- RS庫存編號:
- 252-0300
- 製造零件編號:
- SQA411CEJW-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.46A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SC-70W-6L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13.6W | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.05mm | |
| Width | 2.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.46A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SC-70W-6L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.21mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13.6W | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Maximum Operating Temperature 175°C | ||
Length 2.05mm | ||
Width 2.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
Wettable flank terminals
100 % Rg and UIS tested
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