Vishay Type P-Channel MOSFET, 7.5 A, 20 V Enhancement, 7-Pin PowerPAK SC-70W-6L SQA413CEJW-T1_GE3
- RS庫存編號:
- 252-0302
- 製造零件編號:
- SQA413CEJW-T1_GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 包，共 25 件）*
HK$80.30
訂單超過 HK$250.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$3.212 | HK$80.30 |
| 50 - 75 | HK$3.052 | HK$76.30 |
| 100 - 225 | HK$2.868 | HK$71.70 |
| 250 - 975 | HK$2.664 | HK$66.60 |
| 1000 + | HK$2.452 | HK$61.30 |
* 參考價格
- RS庫存編號:
- 252-0302
- 製造零件編號:
- SQA413CEJW-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK SC-70W-6L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 13.6W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK SC-70W-6L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.21mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 13.6W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
Wettable flank terminals
100 % Rg and UIS tested
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