Texas Instruments N-Channel MOSFET, 10.7 A, 12 V Enhancement DSBGA CSD13306WT
- RS庫存編號:
- 252-8470
- 製造零件編號:
- CSD13306WT
- 製造商:
- Texas Instruments
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- RS庫存編號:
- 252-8470
- 製造零件編號:
- CSD13306WT
- 製造商:
- Texas Instruments
規格
法例與合規
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Texas Instruments | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | DSBGA | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.9W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Texas Instruments | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type DSBGA | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.9W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
相关链接
- Texas Instruments N-Channel MOSFET 12 V Enhancement DSBGA
- Texas Instruments N-Channel MOSFET 12 V Enhancement VSONP
- Texas Instruments N-Channel MOSFET 12 V Enhancement VSONP CSD17578Q3AT
- Texas Instruments N-Channel MOSFET 12 V Enhancement VSON-CLIP CSD17308Q3T
- Texas Instruments N-Channel MOSFET 12 V Enhancement PICOSTAR
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