Vishay IRF740AS N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ASPBF
- RS庫存編號:
- 256-7276
- 製造零件編號:
- IRF740ASPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$650.30
訂單超過 HK$250.00 免費送貨
有庫存
- 850 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$13.006 | HK$650.30 |
| 100 - 450 | HK$12.356 | HK$617.80 |
| 500 - 950 | HK$11.612 | HK$580.60 |
| 1000 + | HK$10.80 | HK$540.00 |
* 參考價格
- RS庫存編號:
- 256-7276
- 製造零件編號:
- IRF740ASPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Series | IRF740AS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | +150°C | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Series IRF740AS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature +150°C | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRF740AS Series Power MOSFET, 400V Drain Source Voltage, 125W Power Dissipation - IRF740ASPBF
This power MOSFET is a high-voltage, N-channel switching device designed for surface-mount power applications. It is intended for use where robust switching of high drain voltages is required and operates across a wide temperature range for demanding thermal environments.
Features and Benefits:
• 400V drain rating enables high-voltage switching applications
• 10A continuous drain current supports substantial load currents
• 0.55Ω Rds(on) reduces conduction losses in switching stages
• 125W power dissipation allows significant thermal throughput
• 36nC typical gate charge facilitates controlled switching transitions
• 10V gate tolerance suits common drive-voltage architectures
• 10A continuous drain current supports substantial load currents
• 0.55Ω Rds(on) reduces conduction losses in switching stages
• 125W power dissipation allows significant thermal throughput
• 36nC typical gate charge facilitates controlled switching transitions
• 10V gate tolerance suits common drive-voltage architectures
Applications
• Suitable for switch-mode power supplies in industrial systems
• Ideal for high-voltage motor-driver front ends
• Used for power conversion in renewable-energy inverters
• Can be used for auxiliary power rails in telecom equipment
• Employed in general-purpose high-voltage switching circuits
• Ideal for high-voltage motor-driver front ends
• Used for power conversion in renewable-energy inverters
• Can be used for auxiliary power rails in telecom equipment
• Employed in general-purpose high-voltage switching circuits
What package type should I anticipate for board layout considerations?
It is supplied in a TO-263 package intended for surface mounting, permitting heat-sinking via the PCB and allowing for larger current paths.
What ambient temperature extremes can the device withstand during operation?
The transistor is rated to function across an operating temperature span from -55°C up to +150°C, accommodating both low-temperature starts and elevated thermal conditions.
How does gate drive affect switching performance?
With a typical gate charge of 36nC at a 10V gate drive, switching speed and gate-drive current requirements should be balanced to manage transition losses and EMI.
What type of conductivity does the device use for switching?
It employs an N-channel conduction channel, suitable for low-side and high-side arrangements depending on circuit topology.
相关链接
- Vishay IRF740AS N-Channel Power MOSFET 400 V, 3-Pin TO-263 IRF740ASPBF
- Vishay Single N-Channel Power MOSFET 400 V, 3-Pin TO-263 IRF740ALPBF
- Vishay IRF740S N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-263 IRF740SPBF
- Vishay N-Channel N-Channel Mosfet 200 V, 3-Pin TO-263 SUM90140E-GE3
- Vishay N-Channel 100 V N-Channel MOSFET 100 V, 3-Pin TO-263 SUM70042E-GE3
- Vishay N-Channel MOSFET 60 V TO-263 SQM120N06-3M5L_GE3
- Vishay N-Channel MOSFET 40 V TO-263 SQM120N04-1M7L_GE3
- Infineon IPT N-Channel MOSFET 800 V, 8-Pin TO-263 IPT012N08N5ATMA1