Infineon HEXFET N-Channel MOSFET, 57 A, 100 V Enhancement SO-8 IRF6644TRPBF

RS庫存編號:: 257-9295
製造零件編號:: IRF6644TRPBF
製造商:: Infineon

Infineon HEXFET N-Channel MOSFET, 57 A, 100 V Enhancement SO-8 IRF6644TRPBF

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小計（1 卷，共 4800 件）*

HK$53,404.80

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單位	每單位	每卷*
4800 +	HK$11.126	HK$53,404.80

* 參考價格

RS庫存編號:: 257-9295
製造零件編號:: IRF6644TRPBF
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	57A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	89W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 57A
	Maximum Drain Source Voltage Vds 100V
	Package Type SO-8
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 89W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF6644TRPBF

Infineon HEXFET Series MOSFET, 100V Maximum Drain-Source Voltage, 57A Maximum Continuous Drain Current - IRF6644TRPBF

This MOSFET is an N-channel enhancement device designed for power switching and control in electronic systems. It operates over a wide temperature range and is supplied in a Compact SO-8 package for mounting on printed circuit assemblies. The device is suitable where high current handling and modest forward diode drop are required, and it meets RoHS environmental restrictions.

Features and Benefits:

• 100V voltage rating enables high-voltage switching capability
• 57A continuous current supports heavy-load applications
• 13mΩ Rds(on) reduces conduction losses during operation
• 89W power dissipation allows sustained thermal loading
• 28nC gate charge enables predictable gate-drive requirements

Applications

• Suitable for DC-DC converters in power supplies
• Ideal for synchronous rectification in switch-mode supplies
• Used with motor-drive stages requiring high current
• Can be used for high-side or low-side switching
• Suitable for intermediate-bus and power-management circuits

What is the permissible ambient operating temperature range?

It functions across a minimum of -55°C up to a maximum of 150°C.

What gate voltage limits must be observed during drive?

The gate must not exceed ±20V relative to the source to prevent damage.

How does the intrinsic diode behave in forward conduction?

The built-in diode exhibits a forward voltage of 1.3V during conduction.

What packaging should be expected for board assembly?

It arrives in an SO-8 surface-mount package suitable for standard solder assembly.