Infineon HEXFET N-Channel MOSFET, -7.4 A, -12 V, 8-Pin SO-8 IRF7329TRPBF
- RS庫存編號:
- 257-9308
- 製造零件編號:
- IRF7329TRPBF
- 製造商:
- Infineon
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HK$67.10
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$13.42 | HK$67.10 |
| 50 - 95 | HK$12.74 | HK$63.70 |
| 100 - 495 | HK$12.00 | HK$60.00 |
| 500 - 1995 | HK$11.14 | HK$55.70 |
| 2000 + | HK$10.22 | HK$51.10 |
* 參考價格
- RS庫存編號:
- 257-9308
- 製造零件編號:
- IRF7329TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | -7.4A | |
| Maximum Drain Source Voltage Vds | -12V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 199mΩ | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id -7.4A | ||
Maximum Drain Source Voltage Vds -12V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 199mΩ | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4mm | ||
Automotive Standard No | ||
The Infineon IRF series is the -12V dual p channel HEXFET power mosfet in a SO 8 package.
RoHS Compliant
Low RDS (on)
Dual p channel mosfet
相关链接
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