Infineon HEXFET N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF
- RS庫存編號:
- 257-9331
- 製造零件編號:
- IRF9358TRPBF
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$60.40
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$12.08 | HK$60.40 |
| 50 - 95 | HK$11.50 | HK$57.50 |
| 100 - 495 | HK$10.78 | HK$53.90 |
| 500 - 1995 | HK$10.02 | HK$50.10 |
| 2000 + | HK$9.24 | HK$46.20 |
* 參考價格
- RS庫存編號:
- 257-9331
- 製造零件編號:
- IRF9358TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -9.2A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -9.2A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate drive voltage (called Logic level)
Capable of being driven at 2.5V gate drive voltage (called super logic level)
Reduced design complexity in high side configuration
Easier interface to microcontroller
相关链接
- Infineon HEXFET N-Channel MOSFET -30 V, 8-Pin SO-8
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