Infineon HEXFET N-Channel MOSFET, 35 A, 150 V Enhancement TO-220 IRFB5615PBF
- RS庫存編號:
- 257-9354
- 製造零件編號:
- IRFB5615PBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 管,共 100 件)*
HK$813.20
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 900 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 100 - 400 | HK$8.132 | HK$813.20 |
| 500 - 900 | HK$7.887 | HK$788.70 |
| 1000 + | HK$7.652 | HK$765.20 |
* 參考價格
- RS庫存編號:
- 257-9354
- 製造零件編號:
- IRFB5615PBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 35A Maximum Continuous Drain Current - IRFB5615PBF
This MOSFET is a through-hole power transistor designed for switching and power conversion in demanding environments. It operates as an enhancement-mode N-channel device in a TO-220 package, suitable for installations requiring a robust drain-source voltage rating and substantial continuous current handling. The component meets RoHS requirements and is rated for a wide thermal span suited to industrial conditions.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching applications
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching
Applications
• Suitable for motor-drive power stages
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks
What package type should I expect for PCB mounting?
It is supplied in a TO-220 through-hole package suitable for secure soldered mounting.
How does the channel type affect switching polarity?
The N-channel configuration requires positive gate drive relative to source for conduction.
Is this component intended for automotive qualification?
It is not specified to conform to automotive-grade standards.
What standard environmental restriction is adhered to?
The device complies with RoHS directives limiting certain hazardous substances.
相关链接
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement TO-220 IRFB5615PBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB4615PBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB52N15DPBF
