Infineon HEXFET N-Channel MOSFET, 159 A, 40 V Enhancement PQFN IRFH7440TRPBF
- RS庫存編號:
- 257-9382
- 製造零件編號:
- IRFH7440TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$80.50
訂單超過 HK$250.00 免費送貨
有庫存
- 3,915 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$16.10 | HK$80.50 |
| 50 - 95 | HK$15.32 | HK$76.60 |
| 100 - 495 | HK$14.38 | HK$71.90 |
| 500 - 1995 | HK$13.38 | HK$66.90 |
| 2000 + | HK$12.28 | HK$61.40 |
* 參考價格
- RS庫存編號:
- 257-9382
- 製造零件編號:
- IRFH7440TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 159A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6mm | |
| Height | 900μm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 159A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6mm | ||
Height 900μm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40V Maximum Drain-Source Voltage, 159A Maximum Continuous Drain Current - IRFH7440TRPBF
This MOSFET is an enhancement-mode N-channel power transistor designed for high-current switching in surface-mounted applications. It operates across a broad temperature range and conforms to RoHS requirements, making it suitable for environments where compact, low-resistance switching is required without automotive certification constraints.
Features and Benefits:
• 2.4mΩ Rds(on) lowers conduction losses
• 104W Pd enables sustained power handling
• 159A continuous current supports heavy loads
• 92 nC gate charge balances drive speed and control
• 20V Vgs max provides gate overvoltage protection
• 104W Pd enables sustained power handling
• 159A continuous current supports heavy loads
• 92 nC gate charge balances drive speed and control
• 20V Vgs max provides gate overvoltage protection
Applications
• Suitable for high-current DC power stages
• Ideal for switch-mode power supplies
• Used with Compact thermal management systems
• Can be used for motor-drive inverter legs
• Used for synchronous rectification in converters
• Ideal for switch-mode power supplies
• Used with Compact thermal management systems
• Can be used for motor-drive inverter legs
• Used for synchronous rectification in converters
What mounting style does it require?
It is supplied in a PQFN package intended for surface-mount assembly.
What thermal range can it withstand during operation?
It is rated to function from -55°C up to 150°C.
How does its forward voltage affect efficiency?
Its forward voltage of 0.9V reduces voltage drop during conduction, affecting overall system losses.
Is it suitable for automotive-qualified designs?
It is not qualified to automotive standards and should not be selected where automotive certification is required.
相关链接
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement PQFN IRFH7440TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement PQFN IRLHS6242TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement PQFN IRLHS6376TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IRFH5006TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN IRFH5015TRPBF