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Infineon HEXFET N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP

Name: Infineon HEXFET N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP
Brand: Infineon
SKU: 257-9428
Availability: InStock

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小計（1 包，共 2 件）*

HK$67.00

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	54mΩ
	Typical Gate Charge Qg @ Vgs	60nC
	Maximum Power Dissipation Pd	320W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 54mΩ
	Typical Gate Charge Qg @ Vgs 60nC
	Maximum Power Dissipation Pd 320W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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