製造零件編號

Infineon HEXFET N-Channel MOSFET, 85 A, 150 V TO-263 IRFS4321TRLPBF

Name: Infineon HEXFET N-Channel MOSFET, 85 A, 150 V TO-263 IRFS4321TRLPBF
Brand: Infineon
SKU: 257-9432
Availability: InStock

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小計（1 卷，共 800 件）*

HK$11,871.20

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單位	每單位	每卷*
800 - 1600	HK$14.839	HK$11,871.20
2400 +	HK$14.542	HK$11,633.60

* 參考價格

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	85A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	15mΩ
	Typical Gate Charge Qg @ Vgs	71nC
	Maximum Power Dissipation Pd	330W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 85A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-263
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 15mΩ
	Typical Gate Charge Qg @ Vgs 71nC
	Maximum Power Dissipation Pd 330W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

The Infineon IRFS series is the 150V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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