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Infineon HEXFET N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF

Name: Infineon HEXFET N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF
Brand: Infineon
SKU: 257-9438
Availability: InStock

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小計（1 包，共 2 件）*

HK$69.40

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	2mΩ
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	375W
	Typical Gate Charge Qg @ Vgs	274nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 2mΩ
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 375W
	Typical Gate Charge Qg @ Vgs 274nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Industry standard surface mount power package

Capable of being wave soldered

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