Infineon HEXFET N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL
- RS庫存編號:
- 258-0632
- 製造零件編號:
- AUIRFR8403TRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$28,260.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$9.42 | HK$28,260.00 |
| 6000 - 6000 | HK$9.137 | HK$27,411.00 |
| 9000 + | HK$8.863 | HK$26,589.00 |
* 參考價格
- RS庫存編號:
- 258-0632
- 製造零件編號:
- AUIRFR8403TRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Power Dissipation Pd | 99W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Power Dissipation Pd 99W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
相关链接
- Infineon HEXFET N-Channel MOSFET 40 V TO-252 AUIRFR8403TRL
- Infineon HEXFET N-Channel MOSFET 40 V TO-252 IRFR7446TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V TO-252 IRLR3114ZTRPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-252 IRFR4104TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IRFR7440TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IRFR4104TRLPBF
- Infineon HEXFET N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252 IRFR3504ZTRPBF
- Infineon HEXFET N-Channel MOSFET 20 V TO-252