Infineon BSZ N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- RS庫存編號:
- 258-0711
- 製造零件編號:
- BSZ037N06LS5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
享受批量購買折扣
額外添加10000件可節省2%
查看批量定價選項小計（1 卷，共 5000 件）*
HK$29,310.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年4月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* | 節省 |
|---|---|---|---|
| 5000 - 5000 | HK$5.862 | HK$29,310.00 | - |
| 10000 - 10000 | HK$5.744 | HK$28,720.00 | 2% |
| 15000 + | HK$5.629 | HK$28,145.00 | 3% |
* 參考價格
- RS庫存編號:
- 258-0711
- 製造零件編號:
- BSZ037N06LS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Monolithically integrated Schottky-like diode
Ultra low charges
Ideal for high performance applications
RoHS compliant - halogen free
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
相关链接
- Infineon BSZ N-Channel MOSFET 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- Infineon BSZ N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon BSZ N-Channel MOSFET 25 V N, 8-Pin TSDSON
- Infineon BSZ N-Channel MOSFET 250 V N, 8-Pin TSDSON BSZ42DN25NS3GATMA1
- Infineon BSZ N-Channel MOSFET 25 V N, 8-Pin TSDSON BSZ013NE2LS5IATMA1
- Infineon BSZ N-Channel MOSFET 25 V N, 8-Pin TSDSON BSZ009NE2LS5ATMA1
- Infineon BSZ N-Channel MOSFET 200 V N, 8-Pin TSDSON BSZ900N20NS3GATMA1
- Infineon BSZ N-Channel MOSFET 30 V N, 8-Pin TSDSON BSZ019N03LSATMA1