Infineon IPD N-Channel MOSFET, 30 A, 60 V N TO-252 IPD220N06L3GATMA1
- RS庫存編號:
- 258-3836
- 製造零件編號:
- IPD220N06L3GATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$7,742.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年4月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$3.097 | HK$7,742.50 |
| 5000 - 5000 | HK$3.035 | HK$7,587.50 |
| 7500 + | HK$2.974 | HK$7,435.00 |
* 參考價格
- RS庫存編號:
- 258-3836
- 製造零件編號:
- IPD220N06L3GATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 39.80mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 39.80mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IPD Series MOSFET, 60V Maximum Drain-Source Voltage, 30A Maximum Continuous Drain Current - IPD220N06L3GATMA1
This MOSFET is a surface‑mount N‑channel transistor designed for power switching in demanding thermal environments. It combines a moderate voltage rating with substantial continuous current capability, making it suitable for applications that need efficient conduction and Compact mounting. The device complies with RoHS standards and is offered in a TO‑252 package for straightforward PCB assembly.
Features and Benefits:
• 39.8mΩ RDS(on) delivering reduced conduction losses
• 1.2V forward voltage enabling efficient gate‑driven switching
• -55°C to +175°C operating range supporting wide temperature extremes
• 60V drain-source rating allowing robust voltage headroom
• 30A continuous drain current supporting high‑current loads
• 1.2V forward voltage enabling efficient gate‑driven switching
• -55°C to +175°C operating range supporting wide temperature extremes
• 60V drain-source rating allowing robust voltage headroom
• 30A continuous drain current supporting high‑current loads
Applications
• Suitable for DC power distribution modules
• Ideal for motor driver switching stages
• Used with battery management circuits requiring surface mounting
• Can be used for synchronous rectification in converters
• Suitable for high‑current load switching on Compact PCBs
• Ideal for motor driver switching stages
• Used with battery management circuits requiring surface mounting
• Can be used for synchronous rectification in converters
• Suitable for high‑current load switching on Compact PCBs
What package type is provided for PCB assembly?
The device is supplied in a TO‑252 surface‑mount package suited to reflow processes.
Which channel polarity does it employ for control circuits?
It uses an N‑channel configuration for low‑side or high‑side switching topologies depending on circuit design.
Is it intended for automotive qualification?
It is not designated as an automotive‑standard device but meets RoHS environmental requirements.
What mounting style is appropriate for this component?
The transistor is intended for surface mounting to permit low‑profile board layouts.
What is the maximum operating temperature specified?
The component is rated to operate up to +175°C.
相关链接
- Infineon IPD N-Channel MOSFET 60 V N TO-252 IPD220N06L3GATMA1
- Infineon IPD N-Channel MOSFET, 9.9 A N TO-252 IPD60R650CEAUMA1
- Infineon IPD N-Channel MOSFET, 18.1 A N TO-252 IPD50R280CEAUMA1
- Infineon IPD N-Channel MOSFET, 3.7 A N TO-252 IPD60R2K1CEAUMA1
- Infineon IPD N-Channel MOSFET, 75 A N TO-252 IPD110N12N3GATMA1
- Infineon IPD N-Channel MOSFET, 90 A N TO-252 IPD036N04LGATMA1
- Infineon IPD N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1
- Infineon IPD N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD028N06NF2SATMA1